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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1185 DESCRIPTION *With TO-3 package *High breakdown voltage *High speed switching APPLICATIONS *Power switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1200 800 6 5 7 50 150 -45~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SD1185 SYMBOL TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0 6 V V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=7 800 V VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A 5.0 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V ICES Collector cut-off current VCE=1200V; RBE=0 0.5 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=0.3A ; VCE=5V 10 30 Switching times tf Fall time IC=4A ;IB1=0.8A; IB2=-2A 1.0 s ts Storage time 1.0 s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1185 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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